PART |
Description |
Maker |
DN100S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
DP500F |
PNP Silicon Transistor (Extremely low collector-to-emitter saturation voltage)
|
AUK[AUK corp]
|
DN500P |
Extremely low collector-to-emitter saturation voltage NPN Silicon Transistor
|
KODENSHI KOREA CORP. AUK corp
|
PMV56XN PMV56XN-01 |
uTrenchMOS (tm) extremely low level FET From old datasheet system mTrenchMOS extremely low level FET
|
Philips
|
2SB1537 |
Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC.
|
TY Semiconductor Co., Ltd
|
KSD1691 KSD1691OS KSD1691YS KSD1691GS KSD1691YSTST |
NPN Epitaxial Silicon Transistor Low Collector-Emtter Saturation Voltage & Large Collector Current Feature
|
Fairchild Semiconductor
|
2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW.
|
USHA India LTD
|
PMF290XN |
N-channel uTrenchmos (tm) extremely low level FET N-channel mTrenchMOS extremely low level FET N-channel mTrenchMOS extremely low level FET
|
http:// PHILIPS[Philips Semiconductors]
|
2SC5026 |
Silicon NPN Epitaxial Planar Type Low collector-emitter saturation voltage VCE(sat). High collector-emitter voltage (Base open) VCEO
|
TY Semicondutor TY Semiconductor Co., Ltd
|
2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic
|
USHA India LTD
|
ASM3P2872A ASM3P2872AF-06OR |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution From old datasheet system The el-EMI-nator? Series for Low-Power
|
Alliance Semiconductor ALSC
|